Ivan Lovshenko
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Head of R&D Lab 4.4 "Computer-aided design of micro- and nanoelectronic systems" ☏ +375 17 293 84 09 Web of Science ID: W-7987-2018 |
FIELD OF EXPERTISE
- Computer-aided design systems in microelectronics.
- Technological and device modeling of electronic components of power electronics, solar energy, as well as special-purpose and dual-use products, including those with increased radiation resistance.
- Physic-topological (electrical) models of a device structure microelectronics, taking into account the degradation of operational characteristics under the influence of penetrating radiation.
- Computer-aided topological design for integrated circuits.
TEACHING OF ACADEMIC DISCIPLINES
- Information technologies in the production of integrated circuits.
- Computer-aided design systems for integrated circuits.
- Information technology.
- Internet Technologies.
EDUCATION
2016 – Researcher’s Diploma, Belarusian State University of Informatics and Radioelectronics (postgraduate programme in “Solid-state electronics, radio-electronic components, micro- and nanoelectronics, devices based on quantum effects”).
2013 – Master of Sciences in Engineering, Belarusian State University of Informatics and Radioelectronics (major in “Solid-state electronics, radio-electronic components, micro- and nanoelectronics, devices based on quantum effects”).
2012 – Higher education degree, qualification of Engineer, Belarusian State University of Informatics and Radioelectronics (major in “Micro- and Nanoelectronic Technologies and Systems”).
2009 – Production technologist, Minsk State Higher Radioengineering College (major in “Microelectronics”).
SUMMARY OF POSITIONS HELD
2019 – present – Head of R&D Laboratory 4.4 Belarusian State University of Informatics and Radioelectronics (BSUIR).
2018 – present – Senior Lecturer, Department of Micro- and Nanoelectronics, BSUIR.
2014 – 2018 – Assistant Lecturer, Department of Micro- and Nanoelectronics, BSUIR.
2013 – 2019 – Junior Researcher, R&D Laboratory 4.4, BSUIR.
2012 – 2013 – Electrical Engineer, R&D Laboratory 4.4, BSUIR.
PROFESSIONAL ACHIEVEMENTS
- Designed the curriculum of the discipline "Fundamentals of computer design in micro- and nanoelectronics" and e-tutorials for the disciplines "Fundamentals of computer design in micro- and nanoelectronics", "Functional and circuit design of integrated circuits" and "Topological design of integrated circuits" (specialties "Micro - and nanoelectronic technologies and systems” and “Quantum information technologies”)
- One of the authors of the textbook approved by the Belarusian Ministry of Education on “Computer design of integrated circuits. Methods and software for device and technological modeling"
- Since 2012 Principal Investigator and Project Manager of various research projects under state research programs, programs of the Belarusian Foundation for Basic Research, business contracts with local companies
- BSUIR Certificate of Honor (2017)
PUBLICATIONS, PATENTS AND OTHER SCINTIFIC WORKS
57 works were published, including over 20 articles in scientific journals, reports at leading international scientific and technical conferences.
MAJOR PAPERS PUBLISHED IN 2015-2020
- Моделирование воздействия тяжелой заряженной частицы на электрические характеристики приборной структуры n-МОП-транзистора И.Ю. Ловшенко, В.Р. Стемпицкий, В.Т. Ханько - 2020. – Т. 18, № 7. – с. 55-62.
- Нитрид-галлиевый транзистор с высокой подвижностью электронов с эффективной системой теплоотвода на основе графена И.Ю. Ловшенко, В.С. Волчёк, В.Т. Шандарович, Дао Динь Ха - Доклады БГУИР. – 2020. – Т. 18, № 3. – с. 72-80.
- Физико-топологическая модель полевого транзистора, учитывающая деградацию эксплуатационных характеристик при влиянии ионизирующего излучения Ловшенко И. Ю., Стемпицкий В. Р., Шандарович В. Т. - Инфокоммуникационные и радиоэлектронные технологии. – Т. 2. – № 4. –2019. – с. 466-475.
- Экстракция параметров компактных моделей элементной базы интегральных микросхем специального назначения Ловшенко И. Ю., Стемпицкий В. Р., Шандарович В. Т. - Инфокоммуникационные и радиоэлектронные технологии. – Т. 2. – № 4. – 2019. – с. 456-465.
- Physic-topological (electrical) model of a junction field effect transistor, taking into account the degradation of operational characteristics under the influence of penetrating radiation I. Lovshenko, V. Khanko and V. Stempitsky - ITM Web of Conferences 30, 10002 - 2019. – p. 8.
- Simulation of the Heavy Charged Particle Impacts on Electrical Characteristics of N-MOSFET Device Structure I. Lovshenko, Dao Dinh Ha, Tran Tuan Trung, Nguyen Trong Quang, V. Khanko, V. Stempitsky. - The International Conference on Advanced Technologies for Communications – Hanoi, Vietnam, 2019. – p. 189-193.
- Features of the penetrating radiation effects simulation on the electronic components characteristics for aerospace vehicles data processing system I. Lovshenko, A. Belous, M. Kutas, V. Solodukha, V. Stempitsky - Proceedings of the Work in Progress Session Euromicro 2018. – Prague (Czech Republic). – 2018. – p. 2.
- Radiation influence on electrical characteristics of complementary junction field-effect transistors exploited at low temperatures I.Yu. Lovshenko, V.T. Khanko, V.R. Stempitsky - J. Materials Physics and Mechanics. – St.Petersburg :Institute of Problems of Mechanical Engineering, vol. 39. – No 1. – 2018. – p. 92 - 101.
- Технологические и конструктивные решения высокочастотных, мощных и оптоэлектронных приборов на основе нитрида галлия И.Ю. Ловшенко, В.С. Волчек, Дао Динь Ха, В.Т. Ханько, В.Р. Стемпицкий - Телекоммуникации: сети и технологии, алгебраическое кодирование и безопасность данных : сборник материалов Международного научно-технического семинара. – Минск: БГУИР, 2017. – С. 69-74.
- Investigation of the radiations effect on the electrical characteristics of a junction field-effect transistor I. Lovshenko, O. Dvornikov, V. Stempitsky, V. Khanko - Proceedings of NDTCS-2017. – Minsk : BSUIR, 2017. – p. 147-150.
- Optimization of structural and technological parameters of junction field-effect transistor with increased radiation hardness I. Lovshenko, O. Dvornikov, V. Stempitsky, V. Khanko - Proceedings of NDTCS-2017. – Minsk : BSUIR, 2017. – P. 150-155.
- Technological and Electrical Characteristics of High Temperature Schottky Diodes I. Lovshenko, A. Belous, M. Kutas, V. Solodukha, S. Shwedov V. Stempitsky - Proceedings of DSD-2017. – Vienna. – 2017. – p 4.
- Приборно-технологическое моделирование высокотемпературных диодов Шоттки И.Ю. Ловшенко, Я.А. Соловьев, В.А. Солодуха, В.Р. Стемпицкий - Современные проблемы радиоэлектроники : материалы XX Всероссийской научно-технической конференции. – Красноярск: Сибирский федеральный университет, Институт инженерной физики и радиоэлектроники. – 2017. – c. 511-513.
- Биполярный транзистор с изолированным затвором, изготовленный в объемном кремнии и по технологии «Кремний на изоляторе» И.Ю. Ловшенко, И. Шелибак, В.Р. Стемпицкий - Доклады БГУИР. – 2016. – № 8 (102). – c. 89-93.
- Интегральный трехмерный магнитометр на основе датчиков Холла, изготовленный по стандартной КМОП технологии И.Ю. Ловшенко, Дао Динь Ха, В.С. Волчёк, М.С. Баранова, Д.Ч. Гвоздовский, В.Р. Стемпицкий - Доклады БГУИР. – 2016. – № 7 (101). – c. 167-171.
- Optimization of structural and technological parameters of the field effect Hall sensor I. Lovshenko, V. Volchek, V. Stempitsky, Dao Dinh Ha, A. Belous, V. Saladukha The International Conference on Advanced Technologies for Communications – 2015, Ho Chi Minh, Vietnam – p. 642-644.