Igor Abramov 

Абрамов Игорь Иванович

Acting Head of R&D Lab "Physics of micro- and nanoelectronic devices"               

☏  +375 17 293 88 77

🖂   nanodev@bsuir.edu.by                         

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Physics and modeling of instrument structures and circuits of micro- and nanoelectronics; electronic interpretation of the human brain functioning.



  • Quantum Mechanics and Statistical physics.
  • Semiconductor devices and IC elements.
  • Computer-aided design systems for integrated circuits.
  • Computer modeling, calculation and design of micro - and nanoelectronics products.
  • Modeling of micro-and nanoelectronics devices (for masters' degree students).
  • Elements of nanoelectronics (for masters' degree students).
  • Registration of the results of scientific and engineering activities (for masters' degree students).



1999 – Full Professor in Electronics and Microelectronics specialty. 
1993 – DSc degree  in Physics and Mathematics.
1982 – PhD degree in Physics and Mathematics.
1976 – Higher education in Radio Physics and Electronics, graduated with honors from Belarusian State University.



1997  present – Acting Head of R&D Lab 4.1 "Physics of micro- and nanoelectronic devices", BSUIR.
1994 – present – Professor of Microelectronics Department (renamed into Micro- and Nanoelectronics Department in 2005), BSUIR.
1983 – Senior Researcher, Minsk State Radioengineering Institute (renamed into BSUIR in 1993).
1976 – Junior Researcher, Belarusian State University.



The most significant scientific results of the studies are:
  • the theory of physical processes in a number of device structures of micro- and nanoelectronics, namely: I2L elements; single-electron transistors, chains and matrices of tunnel junctions; resonant tunneling structures and circuits; interference transistors; quantum wires; nanostructures operating on the principle of coherent transport with self-organization; devices including carbon nanotubes and graphene
  • the methodology of multidimensional simulation of physical processes in elements and fragments of silicon ICs, taking into account the effects of heavy doping, self-heating, and ambient temperature
  • hierarchies of methods of numerical simulation and models of elements of silicon VLSI and ULSI
  • models of device structures of nanoelectronics, operating on the effects of single-electron, resonant tunneling and quantum interference
  • methodology for the automatic synthesis of compact equivalent circuits of semiconductor devices, device structures of micro- and nanoelectronics
  • principles of systems development for simulation of semiconductor devices  and micro- and nanoelectronics devices
  • a full electronic interpretation of the human brain functioning


  • member of two Councils for Doctoral Dissertations in the Republic of Belarus and the Russian Federation
  • member of the Organizing Committee and Program Committees of four international conferences
  • member of BSUIR Expert Council
  • member of the Editorial Board of the university scientific journal "Doklady BGUIR"
  • member of the Editorial Boards of five scientific and technical journals of the Russian Federation


An author of about 400 publications, including 7 monographs, 6 textbooks, and over 200 articles in peer-reviewed scientific journals.