EQUIPMENT AND ELECTROCHEMICAL TECHNOLOGY OF FORMING THREE-DIMENSIONAL METAL INTERCONNECTIONS
|
|
|
|
PURPOSE
The source generates operator-programmable complex sequences of stabilized current/voltage pulses:
- for electrochemical pore formation on silicon
- for electrochemical pore walls oxidation
- for electrochemical filling of pores with copper
MACROPOROUS SILICON WITH INSULATED WALLS
Course of formation of macroporous silicon with insulated walls
SILICON WAFER WITH THE FORMED MACROPORES
Silicon oxide can be formed by a low-temperature approach (the operating temperature of the oxide formation does not exceed 100 °C)
DEVELOPER
R&D Lab 4.2 «Hybrid IC technology»
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 84 52, + 375 29 637 40 09
🖷 +375 17 390 96 28
🖂 ghiro@bsuir.by
OTHER INNOVATIONS IN THIS AREA