DOUBLE-BEAM ION SOURCE BASED ON ACCELERATOR WITH ANODIC LAYER DBIS-001



 

 

 

 

 

 

PURPOSE

Double-beam ion source based on accelerator with anodic layer DBIS-001 is designed for deposition of thin films of metals, semiconductors and dielectrics by ion-beam and reactive ion-beam sputtering. DBIS is also applied for ion cleaning of substrate surfaces and for surface activation. It has two separate stages for ion beam generation, so that two independent ion beams are created, one of which is used for sputtering of the target material, and the other one – for ion pre-cleaning of substrates and for ion assistance.

 

APPLICATION AREA

  • ion-beam sputtering
  • reactive ion-beam sputtering
  • double beam ion sputtering
  • ion-beam assisted deposition (IBAD) with electron-beam, laser and arc evaporators
  • ion-beam assisted magnetron (IBAM)
  • ion pre-cleaning of surface
  • formation of substrate film transition layer (ion mixing)
  • ion etching with the ability to use reactive gas

 

TECHNICAL CHARACTERISTICS 

Sputtering stage

Target diameter, mm                                                                                                                       80
Anode voltage (DC), V 800...6000
Ion energy, eV 300...2000
Discharge current, m up to 300
Ion beam current, m up to 250
Working pressure, P 0,01...0,06
Gas flow, scc/min up to 40
Working gases Ar, O2 , N2 , CH4 , etc.
Deposition rate, nm/sec up to 0,8


Assisting stage

Anode voltage (DC), V                                                                                                                    400...3000
Ion energy, eV 300...1000
Ion beam current, m up to 120
Working pressure, P 0,01...0,06
Working gases Ar, O2 , N2 , CH4, etc.
Size, mm Ø 318255
Weight, g, not more 15

 

ADVANTAGES 

  • an electromagnet is used as a source of the magnetic field, thus allowing an optimization of the magnetic field induction in the acceleration channel, and an increase in the ion beam generation efficiency
  • the ion source is used for sputtering of metallic, semiconductor and dielectric (SiO2, BN, graphite, etc.) targets
  • the ion source may be equipped with a rotary target holder with four targets of different material to form multilayer structures within a single vacuum cycle
  • supplementary equipping the ion source with a rotary target holder permits to sputter mosaic targets to obtain multi-component layers
  • it is possible to obtain component films by applying mixtures of rare and reactive gases (oxygen, nitrogen, etc.) at sputtering of metallic targets

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

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