EXTENDED ION ASSISTED / SPUTTERING SOURCE WITH ROTATORY TARGET
Single beam extended ion assisted / sputtering source with a rotatory target is designed for preliminary ion cleaning and deposition of thin films on the inner surface of large cylindrical objects or drum substrate holder.
The source is located inside the vacuum chamber, drum substrate holder or large cylindrical object.
Application of the source eliminates the additional ion source and several technological devices in a limited volume that enables deposit of multilayer thin film by ion-plasma methods on the inner surface of the cylindrical object with a diameter of 350 mm or more in a single vacuum cycle.
|Target size, mm||600x120|
|Anode voltage (DC), V||1000...6000|
|Ion energy, eV||400...2000|
|Discharge current, mА||up to 500|
|Ion beam current, mА||up to 250|
|Working pressure, Pа||0,03...0,08|
|Gas flow rate, ml/min||up to 80|
|Working gases||Ar, O2, N2, CH4 , etc.|
|Deposition rate (Al), nm/sec||up to 0,8|
|Average SiO2 deposition rate, nm/sec||0,044 *|
|Film thickness uniformity|
|at length of 400 mm, %, not more||18|
|at length of 500 mm, %, not more||40|
|Weight, кg, not more||15|
* at the drum substrate holder rotation Ø 350 mm
- magnetic system is performed on Sr-Fe-O permanent magnets
- Anode, body and the target cooling with running water
- only one ion source is used for ion cleaning, thin film deposition by ion-beam sputtering and the direct ion-beam deposition. It is achieved through the use of a rotatory target unit
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