EXTENDED ION ASSISTED / SPUTTERING SOURCE WITH ROTATORY TARGET



 

 

 

 

 

 

PURPOSE

Single beam extended ion assisted / sputtering source with a rotatory target is designed for preliminary ion cleaning and deposition of thin films on the inner surface of large cylindrical objects or drum substrate holder.

The source is located inside the vacuum chamber, drum substrate holder or large cylindrical object.

Application of the source eliminates the additional ion source and several technological devices in a limited volume that enables deposit of multilayer thin film by ion-plasma methods on the inner surface of the cylindrical object with a diameter of 350 mm or more in a single vacuum cycle.

 

TECHNICAL CHARACTERISTICS 

Target size, mm                                                                                                            600x120 
Anode voltage (DC), V                                                                                                                 1000...6000
Ion energy, eV 400...2000
Discharge current, mА up to 500
Ion beam current, mА up to 250
Working pressure, Pа 0,03...0,08
Gas flow rate, ml/min up to 80
Working gases Ar, O2, N2, CH4 , etc.
Deposition rate (Al), nm/sec up to 0,8
Average  SiO2 deposition rate, nm/sec 0,044 *
Film thickness uniformity  
at length of 400 mm, %, not more 18
at length of 500 mm, %, not more 40
Size, mm 580x140x80
Weight, кg, not more 15

* at the drum substrate holder rotation Ø 350 mm

 

ADVANTAGES 

  • magnetic system is performed on Sr-Fe-O permanent magnets
  • Anode, body and the target cooling with running water
  • only one ion source is used for ion cleaning, thin film deposition by ion-beam sputtering and the direct ion-beam deposition. It is achieved through the use of a rotatory target unit

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»