HIGH DENSITY INDUCTIVELY COUPLED PLASMA FLAT SOURCE

 



 

 

 

 

 

 

PURPOSE

Forming of high-density process plasma of inert and chemically active gases.

 

APPLICATION AREA

Micro-, nano-, optoelectronics and optics assume a number of key processes that require the use of high-density plasma:

  • surface cleaning and activation
  • surface modification (oxidation, nitridation, carbidization)
  • high density plasma chemical vapor deposition (HDP-CVD, ICP-CVD, PECVD)
  • plasma chemical etching in high-density plasma (RIE, ICP-RIE)
  • deep capacitive etching (DRIE)
  • photoresist etching in oxygen plasma

 

TECHNICAL CHARACTERISTICS

Discharge type                                                                                                           HF induction
Generator frequency for excitation, MHz  13,56
Minimum HF power, W from 300 
Maximum RF power, kW up to 2

Plasma generation zone diameter,  mm

over 200
Operating pressure, Pa 0,05…10 
Gas type Ar, 2, N2
and other reactive
gases that do not
form low-resistance
coatings during
deposition
Cooling type
Water
Flange diameter for mounting, mm
260

 

DEVELOPER

Center for Interdisciplinary Research "Center for plasma and biomedical engineering"

 

MANAGEMENT

Dmitry Kotov
head of the center
PhD, Associate Professor
☏  +375 17 293 80 59
🖂   kotov@bsuir.by
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