HIGH DENSITY INDUCTIVELY COUPLED PLASMA FLAT SOURCE
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PURPOSE
Forming of high-density process plasma of inert and chemically active gases.
APPLICATION AREA
Micro-, nano-, optoelectronics and optics assume a number of key processes that require the use of high-density plasma:
- surface cleaning and activation
- surface modification (oxidation, nitridation, carbidization)
- high density plasma chemical vapor deposition (HDP-CVD, ICP-CVD, PECVD)
- plasma chemical etching in high-density plasma (RIE, ICP-RIE)
- deep capacitive etching (DRIE)
- photoresist etching in oxygen plasma
TECHNICAL CHARACTERISTICS
| Discharge type | HF induction |
| Generator frequency for excitation, MHz | 13,56 |
| Minimum HF power, W | from 300 |
| Maximum RF power, kW | up to 2 |
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Plasma generation zone diameter, mm |
over 200
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| Operating pressure, Pa | 0,05…10 |
| Gas type |
Ar, Î2, N2
and other reactive
gases that do not
form low-resistance
coatings during
depositionè
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| Cooling type |
Water
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Flange diameter for mounting, mm
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260
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DEVELOPER
Center for Interdisciplinary Research "Center for plasma and biomedical engineering"
MANAGEMENT
Dmitry Kotov
head of the center
PhD, Associate Professor
☏ +375 17 293 80 59
🖂 kotov@bsuir.by
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