ION ASSISTED EXTENDED SOURCE 



 

 

 

 

 

 

PURPOSE

Extended Hall current ion source (IS) is intended for preliminary ion cleaning, ion etching, ion-beam assisted deposition, and for deposition of thin films by direct ion-beam deposition.

 

APPLICATION AREA

  • ion-beam assisted deposition (IBAD) in conjunction with the electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems
  • formation of substrate film transition layer (ion mixing)
  • ion pre-cleaning
  • ion-beam etching with the possibility to use reactive gases
  • direct ion-beam deposition (DiBD)
  • ion-beam assisted magnetron sputtering (IBAM)

 

TECHNICAL CHARACTERISTICS 

Arrangement                                                                                                        intra-chamber
Magnetic system                                                                                                                    Sr-Fe-O 
permanent magnets
Ion beam length, mm 400
Discharge current, mА up to 400
Anode voltage (DC), V 800...4500
Ion energy, eV 300...1500
Ion beam current, mА up to 200
Working pressure, Pа 0,02...0,09
Gas flow rate, ml/min up to 80
Working gases Ar, O2, N2, CH, etc.
Cooling anode and IS body by forced circulation of running water
IS body dimensions, mm 460x90x50
Overall dimensions, mm, not more 500x100x100
Weight, кg, not more 12

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»