ION ASSISTED EXTENDED SOURCE
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PURPOSE
Extended Hall current ion source (IS) is intended for preliminary ion cleaning, ion etching, ion-beam assisted deposition, and for deposition of thin films by direct ion-beam deposition.
APPLICATION AREA
- ion-beam assisted deposition (IBAD) in conjunction with the electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems
- formation of substrate film transition layer (ion mixing)
- ion pre-cleaning
- ion-beam etching with the possibility to use reactive gases
- direct ion-beam deposition (DiBD)
- ion-beam assisted magnetron sputtering (IBAM)
TECHNICAL CHARACTERISTICS
| Arrangement | intra-chamber |
| Magnetic system |
Sr-Fe-O permanent magnets |
| Ion beam length, mm | 400 |
| Discharge current, mА | up to 400 |
| Anode voltage (DC), V | 800...4500 |
| Ion energy, eV | 300...1500 |
| Ion beam current, mА | up to 200 |
| Working pressure, Pа | 0,02...0,09 |
| Gas flow rate, ml/min | up to 80 |
| Working gases | Ar, O2, N2, CH4 , etc. |
| Cooling | anode and IS body by forced circulation of running water |
| IS body dimensions, mm | 460x90x50 |
| Overall dimensions, mm, not more | 500x100x100 |
| Weight, кg, not more | 12 |
DEVELOPER
Center 2.1 "Plasma Processing Research Center"
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
OTHER INNOVATIONS IN THIS AREA
PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION