ION ASSISTED SOURCE WITH COMBINED ANODIC LAYER
Ion assisted source with combined anodic layer is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.
|Ion energy, eV||
|Ion beam current, mА||up to 1,2|
|Ion current density under varied ion energies, mА/sm2|
|50...250 eV||up to 2,0|
|400...1000 eV||up to 1,0|
|350...1000 eV||up to 0,5|
|Working pressure, Pа||0,015...0,08|
|Gas consumption, ml/min||15...60|
|Uniformity of processing of for 200 cm2 substrate holder, %, not more||10|
Ion assisted source with combined anodic layer is an alliance of an ion source based on Hall current accelerator (HCA) with the end-Hall accelerator (EHA), thus incorporating the features of both. The energy range of this source includes several intervals: with the EHA enabled separately 50 – 120 eV, in case of HCA 400 – 1000 eV, and in the joint mode 100 – 250 eV. Should the joint operation be chosen, the HCA can be used as an electron source to initiate and support the EHA discharge.
- availability of two ion energy ranges
- capability of operation in the filamentless mode with simultaneous functioning of two stages of the ion source
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