ION ASSISTED SOURCE WITH COMBINED ANODIC LAYER
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PURPOSE
Ion assisted source with combined anodic layer is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.
TECHNICAL CHARACTERISTICS
| Ion energy, eV |
50...250 400...1000 |
| Ion beam current, mА | up to 1,2 |
| Ion current density under varied ion energies, mА/sm2 | |
| 50...250 eV | up to 2,0 |
| 400...1000 eV | up to 1,0 |
| 350...1000 eV | up to 0,5 |
| Working pressure, Pа | 0,015...0,08 |
| Gas consumption, ml/min | 15...60 |
| Uniformity of processing of for 200 cm2 substrate holder, %, not more | 10 |
PECULIARITIES
Ion assisted source with combined anodic layer is an alliance of an ion source based on Hall current accelerator (HCA) with the end-Hall accelerator (EHA), thus incorporating the features of both. The energy range of this source includes several intervals: with the EHA enabled separately 50 – 120 eV, in case of HCA 400 – 1000 eV, and in the joint mode 100 – 250 eV. Should the joint operation be chosen, the HCA can be used as an electron source to initiate and support the EHA discharge.
ADVANTAGES
- availability of two ion energy ranges
- capability of operation in the filamentless mode with simultaneous functioning of two stages of the ion source
DEVELOPER
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
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PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION