ION ASSISTED SOURCE WITH COMBINED ANODIC LAYER
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PURPOSE
Ion assisted source with combined anodic layer is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.
TECHNICAL CHARACTERISTICS
| Ion energy, eV |
50...250 400...1000 |
| Ion beam current, mА | up to 1,2 |
| Ion current density under varied ion energies, mА/sm2 | |
| 50...250 eV | up to 2,0 |
| 400...1000 eV | up to 1,0 |
| 350...1000 eV | up to 0,5 |
| Working pressure, Pа | 0,015...0,08 |
| Gas consumption, ml/min | 15...60 |
| Uniformity of processing of for 200 cm2 substrate holder, %, not more | 10 |
PECULIARITIES
Ion assisted source with combined anodic layer is an alliance of an ion source based on Hall current accelerator (HCA) with the end-Hall accelerator (EHA), thus incorporating the features of both. The energy range of this source includes several intervals: with the EHA enabled separately 50 – 120 eV, in case of HCA 400 – 1000 eV, and in the joint mode 100 – 250 eV. Should the joint operation be chosen, the HCA can be used as an electron source to initiate and support the EHA discharge.
ADVANTAGES
- availability of two ion energy ranges
- capability of operation in the filamentless mode with simultaneous functioning of two stages of the ion source
DEVELOPER
Center 2.1 "Plasma Processing Research Center"
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
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PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION