ION ASSISTED SOURCE WITH COMBINED ANODIC LAYER



 

 

 

 

 

 

PURPOSE

Ion assisted source with combined anodic layer is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.

 

TECHNICAL CHARACTERISTICS 

Ion energy, eV                                                                                                        50...250
400...1000
Ion beam current, mА                                                                                                                    up to 1,2
Ion current density under varied ion energies, mА/sm2  
50...250 eV up to 2,0
400...1000 eV up to 1,0
350...1000 eV up to 0,5
Working pressure, Pа 0,015...0,08
Gas consumption, ml/min 15...60
Uniformity of processing of for 200 cm2 substrate holder, %, not more 10

 

PECULIARITIES 

Ion assisted source with combined anodic layer is an alliance of an ion source based on Hall current accelerator (HCA) with the end-Hall accelerator (EHA), thus incorporating the features of both. The energy range of this source includes several intervals: with the EHA enabled separately 50 – 120 eV, in case of HCA 400 – 1000 eV, and in the joint mode 100 – 250 eV. Should the joint operation be chosen, the HCA can be used as an electron source to initiate and support the EHA discharge. 

 

ADVANTAGES 

  • availability of two ion energy ranges
  • capability of operation in the filamentless mode with simultaneous functioning of two stages of the ion source

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

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