ION ASSISTED SOURCE WITH DOUBLE HALL-CURRENT



 

 

 

 

 

 

PURPOSE

Ion assisted source with double Hall-current is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.

 

TECHNICAL CHARACTERISTICS 

Ion energy, eV                                                                                                        10...10 000
Ion beam current, mА                                                                                                                    up to 3,0
Ion current density under varied ion energies, mА/sm2  
10...50 eV up to 1,0
50...350 eV up to 4,0
350...1000 eV up to 0,5
Working pressure, Pа 0,02...0,08
Gas consumption, ml/min 10...60
Uniformity of processing of for 200 cm2 substrate holder, %, not more 10

 

PECULIARITIES 

Ion assisted source with double Hall-current features a discharge area configuration with two anodes and two magnetic field sources based on electromagnets. Depending on the required operation mode of the ion source the electromagnets can be enabled either in opposite or concurrent directions. This makes it possible to control the shape of the magnetic field in the area of generation and ion acceleration. The opposite operation of electromagnets helps to form a magnetic field with a significant axial component, and the source generates an ion beam with energies up to several hundreds of electron-volts. In order to form an ion beam with higher energies (up to 1 keV), the electromagnets are to be enabled in the concurrent direction, and a radial magnetic field is formed in the discharge area as a result.

 

ADVANTAGES 

  • extended ion beam energies range
  • controllability of the ion beam profile through changing distribution of the magnetic fields in the discharge area and applying different potentials to the anodes
  • sub-cosine distribution of the generated ion flow (n < 1) helps to support high uniformity of processing with relatively short ion source – substrate distances

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»