ION ASSISTED SOURCE WITH DOUBLE HALL-CURRENT
Ion assisted source with double Hall-current is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.
|Ion energy, eV||10...10 000|
|Ion beam current, mА||up to 3,0|
|Ion current density under varied ion energies, mА/sm2|
|10...50 eV||up to 1,0|
|50...350 eV||up to 4,0|
|350...1000 eV||up to 0,5|
|Working pressure, Pа||0,02...0,08|
|Gas consumption, ml/min||10...60|
|Uniformity of processing of for 200 cm2 substrate holder, %, not more||10|
Ion assisted source with double Hall-current features a discharge area configuration with two anodes and two magnetic field sources based on electromagnets. Depending on the required operation mode of the ion source the electromagnets can be enabled either in opposite or concurrent directions. This makes it possible to control the shape of the magnetic field in the area of generation and ion acceleration. The opposite operation of electromagnets helps to form a magnetic field with a significant axial component, and the source generates an ion beam with energies up to several hundreds of electron-volts. In order to form an ion beam with higher energies (up to 1 keV), the electromagnets are to be enabled in the concurrent direction, and a radial magnetic field is formed in the discharge area as a result.
- extended ion beam energies range
- controllability of the ion beam profile through changing distribution of the magnetic fields in the discharge area and applying different potentials to the anodes
- sub-cosine distribution of the generated ion flow (n < 1) helps to support high uniformity of processing with relatively short ion source – substrate distances
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