ION SOURCE BASED ON END-HALL ACCELERATOR EHIS-002
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PURPOSE
Ion source based on end-Hall accelerator EHIS-002 is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition.
APPLICATION AREA
- ion-beam assisted deposition (IBAD) in combination with electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems
- formation of substrate film transition layer (ion mixing)
- ion cleaning and surface activation
- direct beam deposition (DiBD)
TECHNICAL CHARACTERISTICS
| Discharge voltage, V | 60...200 |
| Discharge current, А | up to 12 |
| Ion energy, eV | 30...140 |
| Ion beam current, mА | up to 1500 |
| Working gases | Ar, O2 , N2 , CH4 , etc. |
| Working pressure, Pа | 0,008...0,06 |
| Gas flow, scc/min | 9...60 |
| Ion beam profile | j=kl*cosn α (n от 1..3) |
| Non-uniformity of substrate holder processing Ø 1000 мм, %, not more | 6 |
ADVANTAGES
- simplicity of design
- extended operating modes ranges due to an electromagnet as a source of the magnetic field
- water cooling of the anode and the body of the ion source
- the ion source makes it possible to form thin films by means of electron-beam evaporation without the need to heat the substrates, and also to deposit multilayer optical coatings with enhanced adhesion and controllable optical properties
- ion bombardment helps to increase the density of packing, to improve resistance and durability, to modify stresses, and to improve stoichiometry
- since the substrates don’t need to be heated optical coatings may be formed on various types of substrates, including polymer
DEVELOPER
Center 2.1 "Plasma Processing Research Center"
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
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PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION