ION SOURCE BASED ON END-HALL ACCELERATOR WITH INTEGRATED PLASMA ELECTRON SOURCE 



 

 

 

 

 

 

PURPOSE

Ion source based on end-Hall accelerator with integrated plasma electron source is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition when reactive gases are used.

APPLICATION AREA

  • ion-beam assisted deposition (IBAD) in combination with electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems
  • formation of substrate film transition layer (ion mixing)
  • ion cleaning and surface activation
  • direct beam deposition (DiBD)

 

TECHNICAL CHARACTERISTICS 

Discharge voltage, V                                                                                    60...200
Discharge current, А 5,0
Ion energy, eV 30...140
Ion beam current, mА up to 600
Working gases Ar, O2, N2, H2, 
hydrocarbons, chloride- and fluoride-containing gases
Working pressure, Pа 0,015-0,06
Gas flow 15...60
Ion beam profile j = kl·cosn α (n от 1..3)
Non-uniformity of substrate holder processing Ø 1000 мм, %,
not more
6

 

ADVANTAGES 

  • no filament elements
  • insensitive to reactive gas environment
  • long life between servicing
  • extended ranges of operating modes obtained through the use of an electromagnet as the magnetic field source for the ion source
  • water cooling of the anode and body of the ion source

 

DEVELOPER

Center 2.1 "Electronic technologies and engineering diagnostics of process media and solid-state structures"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»