ION SOURCE BASED ON END-HALL ACCELERATOR WITH INTEGRATED PLASMA ELECTRON SOURCE
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PURPOSE
Ion source based on end-Hall accelerator with integrated plasma electron source is designed for pre-cleaning and activation of substrate surface, ion assisted deposition of thin films and direct beam deposition when reactive gases are used.
APPLICATION AREA
- ion-beam assisted deposition (IBAD) in combination with electron-beam, laser and arc evaporators, as well as ion-beam sputtering systems
- formation of substrate film transition layer (ion mixing)
- ion cleaning and surface activation
- direct beam deposition (DiBD)
TECHNICAL CHARACTERISTICS
| Discharge voltage, V | 60...200 |
| Discharge current, А | 5,0 |
| Ion energy, eV | 30...140 |
| Ion beam current, mА | up to 600 |
| Working gases |
Ar, O2, N2, H2, hydrocarbons, chloride- and fluoride-containing gases |
| Working pressure, Pа | 0,015-0,06 |
| Gas flow | 15...60 |
| Ion beam profile | j = kl·cosn α (n от 1..3) |
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Non-uniformity of substrate holder processing Ø 1000 мм, %, not more |
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ADVANTAGES
- no filament elements
- insensitive to reactive gas environment
- long life between servicing
- extended ranges of operating modes obtained through the use of an electromagnet as the magnetic field source for the ion source
- water cooling of the anode and body of the ion source
DEVELOPER
Center 2.1 "Plasma Processing Research Center"
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
OTHER INNOVATIONS IN THIS AREA
PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION