Home / Our Technologies / Plasma technology

RF/DC MAGNETRON SPUTTERING SYSTEM RIF-001.036



 

 

 

 

 

 

PURPOSE

RF/DC magnetron sputtering system RIF-001.036 is used in the technology of vacuum ion-plasma thin-film deposition and intended for deposition of layers of precious and platinum group metals, semiconductors, and dielectrics by means of DC, RF (13.56 MHz), pulsed MF (10 – 200 kHz) magnetron sputtering, and reactive magnetron sputtering. 

 

APPLICATION AREA

  • DC magnetron sputtering
  • pulse MF magnetron sputtering
  • RF magnetron sputtering
  • DC/MF reactive magnetron sputtering
  • RF reactive magnetron sputtering

 

TECHNICAL CHARACTERISTICS

Magnetic system                                                                                                                     Nd-Fe-B permanent magnets
Target size, mm Ø 36 (target thickness 1-4 мм) *
Substrate size, mm 30x30 **
DC discharge voltage, V 300...600
DC discharge current, А up to 1,0
HF discharge power (13.56 MHz), W up to 200
Working gases rare or a mixture of rare and reactive gases (O2, N2 , CxHy)
Gas consumption, ml/min 20...100
Working pressure, Pа 0,06...1,0
Deposition rate (Al target), nm/sec   
DC 150 W up to 20,0
RF (13.56 MHz, 150 W) up to 5,0
Magnetron dimensions, mm Ø 61x197
Weight, кg, not more 2,0


*on the Customer’s request the target size may be changed in the range from 20 up to 160 mm
** for the preset film thickness nonuniformity of ±10 %


ADVANTAGES

  • magnetron system is made on Nd-Fe-B magnets
  • copper body of the cathode assembly accounts for good cooling of the target and the magnetic system
  • indirect target and magnetic system cooling
  • rapid replacement of target
  • compact target size Ø 36 mm makes it possible to use efficiently this magnetron for sputtering of targets made of expensive materials and precious metals, which makes it suitable for incorporation into research equipment to study and prove the technology processes
  • magnetron can be located on flanges of the vacuum chamber, integrated into ion beam assisted source ASIS-002, or located instead of the target block of sputtering ion sources of SPIS-002 or DBIS-001 series

 

DEVELOPER

Center 2.1 "Ion Plasma Systems and Technologies"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»