UNBALANCED MAGNETRON SPUTTERING SYSTEM MAC-80 



 

 

 

 

 

 

PURPOSE

Unbalanced sputtering system MAC-80 is intended for deposition of metals layers and their compounds by magnetron sputtering and reactive magnetron sputtering under ion-assisted conditions.

 

APPLICATION AREA
  • DC magnetron sputtering
  • MF pulse magnetron sputtering
  • DC/MF reactive magnetron sputtering

 

TECHNICAL CHARACTERISTICS 

Target Ø 80 мм

Discharge voltage, V                                                                                                                       300...600
Discharge current DC, А up to 4,0
Working pressure, Pа 0,02...0,5
Substrate current density, mА/sm2 up to 15
Unbalance coefficient (К) 1,0...8,0
Working gases rare or a mixture of rare and reactive gases (O2, N2 , CxHy)
Gas consumption, ml/min up to 40
Target size, mm Ø 80 *

* on the Customer’s request the target size may be changed in the range from 60 up to 160 mm


PECULIARITIES

The unbalanced magnetron sputtering system MAC-80 features the main magnetic system generating a balanced magnetic field configuration over the target surface. An additional coil is used to control the magnetic field distribution in the target-substrate space. This configuration allows regulating the substrate ion-current density, as well as the ion-to-atom ratio (i/a) on the condensation surface by changing the magnetron unbalance level (K). 

 

DEVELOPER

Center 2.1 "Ion Plasma Systems and Technologies"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»