UNBALANCED MAGNETRON SPUTTERING SYSTEM MAC-80
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PURPOSE
Unbalanced sputtering system MAC-80 is intended for deposition of metals layers and their compounds by magnetron sputtering and reactive magnetron sputtering under ion-assisted conditions.
APPLICATION AREA
- DC magnetron sputtering
- MF pulse magnetron sputtering
- DC/MF reactive magnetron sputtering
TECHNICAL CHARACTERISTICS
Target Ø 80 мм
| Discharge voltage, V | 300...600 |
| Discharge current DC, А | up to 4,0 |
| Working pressure, Pа | 0,02...0,5 |
| Substrate current density, mА/sm2 | up to 15 |
| Unbalance coefficient (К) | 1,0...8,0 |
| Working gases | rare or a mixture of rare and reactive gases (O2, N2 , CxHy) |
| Gas consumption, ml/min | up to 40 |
| Target size, mm | Ø 80 * |
* on the Customer’s request the target size may be changed in the range from 60 up to 160 mm
PECULIARITIES
The unbalanced magnetron sputtering system MAC-80 features the main magnetic system generating a balanced magnetic field configuration over the target surface. An additional coil is used to control the magnetic field distribution in the target-substrate space. This configuration allows regulating the substrate ion-current density, as well as the ion-to-atom ratio (i/a) on the condensation surface by changing the magnetron unbalance level (K).
DEVELOPER
Center 2.1 "Plasma Processing Research Center"
CONTACTS
6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 80 79, +375 17 293 88 35
🖷 +375 17 293 88 35
🖂 svad@bsuir.by ; szavad@bsuir.by
🌐 plasma.bsuir.by
OTHER INNOVATIONS IN THIS AREA
PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION