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FORMATION TECHNOLOGY OF GERMANIUM CLUSTERS IN THE FILMS OF POLYCRYSTAL GERMANIUM-DOPED SILICON 



 

 

 

 

 

 

PURPOSE

The formation technology of germanium clusters in the films of polycrystal silicon is designed to fabricate valves for MIS transistors with non-volatile EPROM, multipurpose MIS transistors, solar elements, as well as for other electronic devices based on polycrystal silicon

 

ТECHNICAL CHARACTERISTICS 

Precipitation temperature, ºС                                                                                                           520…540

General pressure of gas mixtures, Pa

 30…35
Monosilane partial pressure, Pa 28…33
Volume ratio GeH4/SiH4 = 0,001…0,003
Precipitation time, minutes 10…50
Nanocluster height, nm 1...20
Lateral size, nm 20...240


 

ADVANTAGES

  • A complete breakdown of the gate dielectric is excluded, therefore the reliability of an electronic device is increased 

 

DEVELOPER

R&D LAB 4.5 «Nanophotonics»

 

CONTACTS

6, P.Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 88 75
🖷  +375 17 390 96 28
🖂   nik@nano.bsuir.edu.by

 

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