LIGHT-EMITTING DIODES ON THE BASIS OF SILICON NANOSTRUCTURES 



 

 

 

 

 

 

PURPOSE

Light-emitting diodes based on nanostructured silicon are used for in-chip optical interconnections of integrated michrocircuits, as well as for micro-display devices, produced using silicon technology

 

TECHNICAL CHARACTERISTICS

Ligh-emitting range, nm                                                                                                             450…1100
Light-emitting efficiency:
continuous light-emittance, %
pulse mode, %

0,4
1,2
Operation speed (light delay time), ns 2
Light-emitting stability, hours, no more than 103
Min. size of light-emitting elements, µm  1
Range of operational temperature, ºС -50...+200


 

ADVANTAGES

  • compatibility of the LED production technology with the silicon technology 
  • high operation speed of light-emitting diodes 
  • light-emitting stability within the timeline
  • possibility to scale the light-emitting elements down to 1 µm
  • low labour-intesive production technology

 

DEVELOPER

R&D LAB 4.12 «Electrochemical nano-structure materials»

 

CONTACTS

6, P.Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 84 09, +375 17 293 80 79
🖷  +375 17 390 96 28
🖂   serg@nano.bsuir.edu.by

 

OTHER INNOVATIONS IN THIS AREA

NANOTECHNOLOGIES

MICROELECTRONICS