LIGHT-EMITTING DIODES ON THE BASIS OF SILICON NANOSTRUCTURES
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PURPOSE
Light-emitting diodes based on nanostructured silicon are used for in-chip optical interconnections of integrated michrocircuits, as well as for micro-display devices, produced using silicon technology
TECHNICAL CHARACTERISTICS
| Ligh-emitting range, nm | 450…1100 |
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Light-emitting efficiency: continuous light-emittance, % pulse mode, % |
0,4 1,2 |
| Operation speed (light delay time), ns | 2 |
| Light-emitting stability, hours, no more than | 103 |
| Min. size of light-emitting elements, µm | 1 |
| Range of operational temperature, ºС | -50...+200 |
ADVANTAGES
- compatibility of the LED production technology with the silicon technology
- high operation speed of light-emitting diodes
- light-emitting stability within the timeline
- possibility to scale the light-emitting elements down to 1 µm
- low labour-intesive production technology
DEVELOPER
R&D Lab 4.6 "Integrated micro- and nanosystems"
CONTACTS
6, P.Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 88 69
🖷 +375 17 390 96 28
🖂 serg@nano.bsuir.edu.by
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