REACTOR OF COMBINED ISOTROPIC-ANISOTROPIC ETCHING OF ELECTRONIC DEVICE MATERIALS 



 

 

 

 

 

 

PURPOSE

This reactor of combined isotropic-anisotropic etching of electronic device materials is used to form contact opening in dielectric layers when creating extra large integrated circuits

 

TECHNICAL CHARACTERISTICS

Characteristics of an isotropic etching reactor 

Operating pressure in chamber, Pa                                                                                                                  10...100
Si2 thermal etching speed (in SF6 environment), µm /min 0,2...0,3
Non-homogenous etching, %, no more than ± 5
Si2/photoresist etching selectivity 5...10
Substrate temperature (typical value), º +85
RF power (frequency 13,56 MHz), W up to 700
Size, mm 300x300x300

 

 Characteristics of an anisotropic etching reactor 

Operating pressure in chamber, Pa                                                                                                                  1...10
Si2 thermal etching speed (in freon-218 environment), µm /min 0,1...0,15       
Non-homogenous etching, %, no more than ± 5
Si/Si2 etching selectivity  1/7...10
Substrate temperature (typical value), º +85
RF power (frequency 13,56 MHz), W up to 700
Size, mm 200

 


ADVANTAGES

  • simplicity 
  • technological efficiency 
  • small size  
  • possibility to switch from the isotropic etching mode to the anisotropic etching mode within the same vacuum cycle by the method of simple commutation and changing of the working conditions 

 

DEVELOPER

R&D LAB 4.6 «Integrated micro- and nanosystems»

 

CONTACTS

6, P.Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 202 10 05, +375 17 293 23 32
🖷  +375 17 293 23 32
🖂   labunov@bsuir.by , shulitski@bsuir.by

 

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