REACTOR OF COMBINED ISOTROPIC-ANISOTROPIC ETCHING OF ELECTRONIC DEVICE MATERIALS
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PURPOSE
This reactor of combined isotropic-anisotropic etching of electronic device materials is used to form contact opening in dielectric layers when creating extra large integrated circuits
TECHNICAL CHARACTERISTICS
Characteristics of an isotropic etching reactor
| Operating pressure in chamber, Pa | 10...100 |
| SiÎ2 thermal etching speed (in SF6 environment), µm /min | 0,2...0,3 |
| Non-homogenous etching, %, no more than | ± 5 |
| SiÎ2/photoresist etching selectivity | 5...10 |
| Substrate temperature (typical value), ºÑ | +85 |
| RF power (frequency 13,56 MHz), W | up to 700 |
| Size, mm | 300x300x300 |
Characteristics of an anisotropic etching reactor
| Operating pressure in chamber, Pa | 1...10 |
| SiÎ2 thermal etching speed (in freon-218 environment), µm /min | 0,1...0,15 |
| Non-homogenous etching, %, no more than | ± 5 |
| Si/SiÎ2 etching selectivity | 1/7...10 |
| Substrate temperature (typical value), ºÑ | +85 |
| RF power (frequency 13,56 MHz), W | up to 700 |
| Size, mm | 200 |
ADVANTAGES
- simplicity
- technological efficiency
- small size
- possibility to switch from the isotropic etching mode to the anisotropic etching mode within the same vacuum cycle by the method of simple commutation and changing of the working conditions
DEVELOPER
R&D Lab 4.6 «Integrated micro- and nanosystems»
CONTACTS
6, P.Brovki str., 220013, Minsk, Republic of Belarus
☏ +375 17 293 21 21
🖷 +375 17 293 23 32
🖂 labunov@bsuir.by, shulitski@bsuir.by
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