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ION BEAM ASSISTED SOURCE BASED ON ACCELERATOR WITH ANODIC LAYER ASIS-002



 

 

 

 

 

 

PURPOSE

Ion beam assisted source based on accelerator with anodic layer ASIS-002 is designed for pre-cleaning of substrates, as well as for ion-beam etching, ion-beam assisted deposition of thin films and direct beam deposition. 

 

APPLICATION AREA

  • ion-beam assisted deposition (IBAD) in combination with electron-beam, laser, arc evaporators or ion-beam sputtering systems
  • formation of substrate film transition layer (ion mixing)
  • ion pre-cleaning
  • ion-beam etching with the ability to use reactive gas
  • direct beam deposition (DiBD)
  • ion-beam assisted magnetron sputtering (IBAM)

 

TECHNICAL CHARACTERISTICS 

Anode voltage (DC), V                                                                                                            450...6000
Ion energy, eV 150...2000
Ion beam current, mА up to 200
Working pressure, Pа 0,01...0,06
Gas flow, scc/min up to 40
Working gases Ar, O2, N2, hydrocarbons, etc.
Size, mm Ø 298х175
Weight, кg, not more 9


ADVANTAGES

  • an electromagnet is used as a source of the magnetic field, thus allowing an optimization of the magnetic field induction in the acceleration channel, and an increase in the ion beam generation efficiency
  • it is possible to change the inclination angle of the ion beam by replacing the parts in the discharge area of the ion source
  • it is possible to turn the sputtering ion source into an assisting one by replacing the parts of the discharge area and to install the target unit
  • the RF/DC magnetron can be included into the structure of the ion source. This permits to implement the method of the ion beam assisted magnetron sputtering (IBAM)
  • the ion source may be supplementary equipped with a filament-free ion beam neutralizer
  • a unique construction of the flange mounting of the ion source provides an easy access for an operator to clean the ion source
  • the use of the ion assistance makes it possible to increase the adhesion of the deposited layers, reduce the porosity of the deposited layers, control internal stress in a layer, and stoichiometry when depositing the compounds

 

DEVELOPER

Center 2.1 "Plasma Processing Research Center"

 

CONTACTS

6, P. Brovki str., 220013, Minsk, Republic of Belarus
☏  +375 17 293 80 79, +375 17 293 88 35 
🖷  +375 17 293 88 35
🖂   svad@bsuir.by ; szavad@bsuir.by
🌐  plasma.bsuir.by

 

OTHER INNOVATIONS IN THIS AREA

ION SOURCES

PLASMA ELECTRON SOURCE FOR ION BEAM NEUTRALIZATION

MAGNETRON SPUTTERING SYSTEMS

SYSTEM FOR DIAGNOSTIC PARAMETERS

PROGRAM COMPLEX FOR SIMULATION «DEPOSITION»